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| DATA SHEET 2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD PD TJ,Tstg JA JC 25 15 5.0 100 0.5 1.2 -65 to +200 350 146 UNITS V V V mA W W C C/W C/W ELECTRICAL CHARACTERISTICS: SYMBOL ICES ICES IEBO BVCBO BVCEO VCE(SAT) VBE(SAT) hFE hFE hFE hFE hfe Cob Cib TEST CONDITIONS VCE=15V VCE=15V, TA=150C VEB=5.0V IC=10A IC=10mA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=0.5V, IC=50A VCE=0.5V, IC=10mA VCE=0.5V, IC=10mA, TA=-55C VCE=1.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz 2N2411 MIN MAX 10 10 25 15 0.7 10 20 10 1.4 5.0 8.0 0.2 0.9 60 10 2N2412 MIN MAX 10 10 10 25 15 0.7 20 40 20 1.4 5.0 8.0 0.2 0.9 120 20 UNITS nA A A V V V V pF pF (CONTINUED ON REVERSE SIDE) R0 2N2411 / 2N2412 ELECTRICAL CHARACTERISTICS (Continued) SYMBOL td tr ton ts tf toff PNP SILICON TRANSISTOR TEST CONDITIONS VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300 VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300 VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300 IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300 IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300 IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300 2N2411 MIN MAX 10 20 25 90 20 100 2N2412 MIN MAX 10 20 25 90 20 100 UNITS ns ns ns ns ns ns JEDEC TO-18 CASE - MECHANICAL OUTLINE A B D C E SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.030 0.76 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.019 0.41 0.48 0.100 2.54 0.050 1.27 0.036 0.046 0.91 1.17 0.028 0.048 0.71 1.22 TO-18 (REV: R1) F LEAD #2 LEAD #1 G H LEAD #3 I 45 J R1 Lead Code: 1) Emitter 2) Base 3) Collector |
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